Reactive lon-Etching
Si Deep RIE
[with Bosch Process]
We are capable of providing both Dry Etching (RIE, DRIE) functions.
The process technology aligns with the design requirements.
The Deep RIE function allows for anisotropic etching of Si, which is useful for applications such as close tolerance comb fingers, vias, holes, and trench etching.
We have dedicated equipment for the Bosch Process:
: Etching of 6-8 inch Si wafers
: Vertical etching technology with a depth of <300um
: 90° sidewall angle
Si deep RIE
[without Bosch Process]
We have various types of Si etching technologies:
: Etching technology for lens shapes with diameters ranging from 10um to 4mm and heights from 10 to 250µm.: Si etching technology for patterns ranging from hundreds of nm to several mm.
: Technology for manufacturing 8-step Fresnel lenses.